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1 ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice doc. no. 1109, rev. b cat25320 32k-bit spi serial cmos eeprom features 10 mhz spi compatible 1.8 to 5.5 volt operation hardware and software protection low power cmos technology spi modes (0,0 &1,1) industrial temperature range 1,000,000 program/erase cycles 100 year data tetention self-timed write cycle rohs compliant ? & 8-pin pdip and 8-pin soic packages 64-byte page write buffer block write protection ?protect 1/4, 1/2 or all of eeprom array pin configuration pin functions pin name function so serial data output sck serial clock wp write protect v cc +1.8v to +6.0v power supply v ss ground cs chip select si serial data input hold suspends serial input description the cat25320 is a 32k-bit spi serial cmos eeprom internally organized as 4kx8 bits. catalysts advanced cmos technology substantially reduces device power requirements. the cat25320 features a 64-byte page write buffer. the device operates via the spi bus serial interface and is enabled though a chip select ( cs ). in addition to the chip select, the clock input (sck), data in (si) and data out (so) are required to access the device. the hold pin may be used to suspend any serial communication without resetting the serial se- quence. the cat25320 is designed with software and hardware write protection features including block write protection. the device is available in 8-pin dip, soic and tssop packages. functional symbol 8 7 6 5 v cc hold sck si wp cs so v ss 1 2 3 4 pdip (l) soic (v) tssop (y) v cc v ss so si cs wp hold sck cat25320
cat25320 2 doc. no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice absolute maximum ratings* storage temperature -65 c to +150 c voltage on any pin with respect to ground (1) -0.5 v to +6.5 v * stresses above those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. exposure to any absolute maximum rating for extended periods may affect device performance and reliability. reliability characteristics (2) symbol parameter min units n end (*) endurance 1,000,000 program/ erase cycles t dr data retention 100 years (*) page mode, v cc = 5 v, 25 c d.c. operating characteristics v cc = 1.8 v to 5.5 v, t a = -40 c to 85 c, unless otherwise specified. symbol parameter test conditions min max units i cc supply current read, write, v cc = 5.0v, f sck = 10mhz, 2 ma so open i sb1 standby current v in = gnd or v cc , cs = v cc , wp = v cc ,2 a v cc = 5 v i sb2 standby current v in = gnd or v cc , cs = v cc , wp = gnd, 4 a v cc = 5 v i l input leakage current v in = gnd or v cc -2 2 a i lo output leakage current cs = v cc , v out = gnd or v cc -1 1 a v il (3) input low voltage -0.5 0.3v cc v v ih (3) input high voltage 0.7v cc v cc + 0.5 v v ol1 output low voltage v cc > 2.5v, i ol = 3.0ma 0.4 v v oh1 output high voltage v cc > 2.5v, i oh = -1.6ma v cc - 0.8v v v ol2 output low voltage v cc > 1.8v, i ol = 150 a 0.2 v v oh2 output high voltage v cc > 1.8v, i oh = -100 av cc - 0.2v v pin capacitance (2) t a = 25 c, f = 1 mhz, v cc = 5v symbol test conditions max units conditions c out output capacitance (so) 8 pf v out = 0 v c in input capacitance ( cs , sck, si, wp , hold )6 pfv in = 0 v note: (1) the dc input voltage on any pin should not be lower than -0.5v or higher than v cc + 0.5v. during transitions, the voltage on any pin may undershoot to no less than -1.5v or overshoot to no more than v cc + 1.5v, for periods of less than 20ns. (2) these parameters are tested initially and after a design or process change that affects the parameter according to appropria te aec-q100 and jedec test methods. (3) v il and v ih are reference values and are not tested.
cat25320 3 doc no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice cat250xx-1.8 cat250xx 1.8v-5.5v 2.5v-5.5v test symbol parameter min. max. min. max. conditions units t su data setup time 30 20 ns t h data hold time 30 20 ns t wh sck high time 75 40 ns t wl sck low time 75 40 ns f sck clock frequency dc 5 dc 10 mhz t lz hold to output low z 50 50 ns t ri (1) input rise time 2 2 s t fi (1) input fall time 2 2 s t hd hold setup time 0 0 ns t cd hold hold time 10 10 ns t wc (4) write cycle time 5 5 ms t v output valid from clock low 75 40 ns t ho output hold time 0 0 ns t dis output disable time 50 20 ns t hz hold to output high z 100 25 ns t cs cs high time 50 15 ns t css cs setup time 50 15 ns t csh cs hold time 50 15 ns t wps wp setup time 10 10 ns t wph wp hold time 10 10 ns a.c. characteristics power-up timing (1)(3) symbol parameter max. units t pur power-up to read operation 1 ms t puw power-up to write operation 1 ms note: (1) this parameter is tested initially and after a design or process change that affects the parameter. (2) ac test conditions: input pulse voltages: 0.3v cc to 0.7v cc input rise and fall times: 10ns input and output reference voltages: 0.5v cc output load: current source iol max/ioh max; c l =50pf (3) t pur and t puw are the delays required from the time v cc is stable until the specified operation can be initiated. (4) t wc is the time from the rising edge of cs after a valid write sequence to the end of the internal write cycle. c l = 50pf
cat25320 4 doc. no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice functional description the cat25320 supports the spi bus data transmission protocol. the synchronous serial peripheral interface (spi) helps the cat25320 to interface directly with many of today s popular microcontrollers. the cat25320 contains an 8-bit instruction register. (the instruction set and the operation codes are detailed in the instruction set table) after the device is selected with cs going low, the first byte will be received. the part is accessed via the si pin, with data being clocked in on the rising edge of sck. the first byte contains one of the six op-codes that define the operation to be performed. pin description si: serial input si is the serial data input pin. this pin is used to input all opcodes, byte addresses, and data to be written to the cat25320. input data is latched on the rising edge of the serial clock. so: serial output so is the serial data output pin. this pin is used to transfer data out of the cat25320. during a read cycle, data is shifted out on the falling edge of the serial clock. sck: serial clock sck is the serial clock pin. this pin is used to synchronize figure 1. sychronous data timing note: dashed line= mode (1, 1) valid in v ih v il t css v ih v il v ih v il v oh v ol hi-z t su t h t wh t wl t v t cs t csh t ho t dis hi-z cs sck si so t ri t fi instruction opcode operation wren 0000 0110 enable write operations wrdi 0000 0100 disable write operations rdsr 0000 0101 read status register wrsr 0000 0001 write status register read 0000 0011 read data from memory write 0000 0010 write data to memory instruction set
cat25320 5 doc no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice protected unprotected status wpen wp wp wp wp wp wel blocks blocks register 0 x 0 protected protected protected 0 x 1 protected writable writable 1 low 0 protected protected protected 1 low 1 protected writable protected x high 0 protected protected protected x high 1 protected writable writable the communication between the microcontroller and the cat25320. opcodes, byte addresses, or data present on the si pin are latched on the rising edge of the sck. data on the so pin is updated on the falling edge of the sck. cs cs cs cs cs : chip select cs is the chip select pin. cs low enables the cat25320 and cs high disables the cat25320. cs high takes the so output pin to high impedance and forces the devices into a standby mode (unless an internal write operation is underway). a high to low transition on cs is required prior to any sequence being initiated. a low to high transition on cs after a valid write sequence is what initiates an internal write cycle. wp wp wp wp wp : write protect wp is the write protect pin. the write protect pin will allow normal read/write operations when held high. when wp is tied low and the wpen bit in the status register is set to 1 , all write operations to the status register are inhibited. wp going low while cs is still low will interrupt a write to the status register. if the internal write cycle has already been initiated, wp going low will have no effect on any write operation to the status register. the wp pin function is blocked when the wpen bit is set to 0. figure 10 illustrates the wp timing sequence during a write operation. hold hold hold hold hold : hold the hold pin is used to pause transmission to the cat25320 while in the middle of a serial sequence without having to re-transmit entire sequence at a later time. to pause, hold must be brought low while sck is low. the so pin is in a high impedance state during the time the part is paused, and transitions on the si pins will be ignored. to resume communication, hold is brought high, while sck is low. (hold should be held high any time this function is not being used.) hold may be tied high directly to v cc or tied to v cc through a resistor. figure 9 illustrates hold timing sequence. status register bits array address protection bp1 bp0 protected 0 0 none no protection 0 1 0c00-0fff quarter array protection 1 0 800-0fff half array protection 1 1 0000-0fff full array protection block protection bits 76543210 wpen x x x bp1 bp0 wel rdy status register
cat25320 6 doc. no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice figure 2. wren instruction timing figure 3. wrdi instruction timing status register the status register indicates the status of the device. the rdy (ready) bit indicates whether the cat25320 is busy with a write operation. when set to 1 a write cycle is in progress and when set to 0 the device indicates it is ready. this bit is read only. the wel (write enable) bit indicates the status of the write enable latch . when set to 1, the device is in a write enable state and when set to 0 the device is in a write disable state. the wel bit can only be set by the wren instruction and can be reset by the wrdi instruction. the bp0 and bp1 (block protect) bits indicate which blocks are currently protected. these bits are set by the user issuing the wrsr instruction. the user is allowed to protect quarter of the memory, half of the memory or the entire memory by setting these bits. once protected the user may only read from the protected portion of the array. these bits are non-volatile. sck si cs so note: dashed line = mode ( 1, 1 ) 00000 110 high impedance sck si cs so 00000 100 high impedance note: dashed line = mode ( 1, 1 ) the wpen (write protect enable) is an enable bit for the wp pin. the wp pin and wpen bit in the status register control the programmable hardware write protect feature. hardware write protection is enabled when wp is low and wpen bit is set to high. the user cannot write to the status register (including the block protect bits and the wpen bit) and the block protected sections in the memory array when the chip is hardware write protected. only the sections of the memory array that are not block protected can be written. hardware write protection is disabled when either wp pin is high or the wpen bit is zero. device operation write enable and disable the cat25320 contains a write enable latch. this latch must be set before any write operation. the device powers up in a write disable state when v cc is applied. wren instruction will enable writes (set the latch) to thedevice. wrdi instruction will disable writes (reset the latch) to the device. disabling writes will protect the device against inadvertent writes.
cat25320 7 doc no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice read sequence the part is selected by pulling cs low. the 8-bit read instruction is transmitted to the cat25320, followed by the 16-bit address (the four most significant bits are don't care). after the correct read instruction and address are sent, the data stored in the memory at the selected address is shifted out on the so pin. the data stored in the memory at the next address can be read sequentially by continu- ing to provide clock pulses. the internal address pointer is automatically incremented to the next higher address after each byte of data is shifted out. when the highest address, fffh is reached, the address counter rolls over to 0000h allowing the read cycle to be continued indefinitely. the read operation is terminated by pulling the cs high. read sequece is illustrated in figure 4. to read the status register, rdsr instruction should be sent. the contents of the status register are shifted out on the so line. the status register may be read at any time even during a write cycle. reading status register is illustrated in figure 5. write sequence the cat25320 powers up in a write disable state. prior to any write instructions, the wren instruction must be sent to cat25320. the device goes into write enable state by pulling the cs low and then clocking the wren instruction into cat25320. the cs must be brought high after the wren instruction to enable writes to the device. if the write operation is initiated immediately after the wren instruction without cs being brought high, the data will not be written to the array because the write enable latch will not have been properly set. also, for a successful write operation the address of the memory location(s) to be programmed must be outside the protected address field location selected by the block protection level. figure 4. read instruction timing figure 5. rdsr instruction timing 012345678 10 911121314 sck si data out msb high impedance opcode so 7 6 5 4 3 2 1 0 cs 00 0 00 1 01 note: dashed line= mode (1, 1) sck si so 0000001 1 address 012345678910 2021222324252627282930 7 6 5 4 3 2 1 0 cs opcode data out msb high impedance note: dashed line= mode (1, 1)
cat25320 8 doc. no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice figure 7. wrsr instruction timing figure 6. write instruction timing sck si so 00 00 00 10 address d7 d6 d5 d4 d3 d2 d1 d0 012345678 2122232425262728293031 cs opcode data in high impedance note: dashed line = mode (1, 1) byte write once the device is in a write enable state, the user may proceed with a write sequence by setting the cs low, issuing a write instruction via the si line, followed by the 16-bit address (four most significant bits are don't care), and then the data to be written. program- ming will start after the cs is brought high. figure 6 illustrates byte write sequence. during an internal write cycle, all commands will be ignored except the rdsr (read status register) instruction. the status register can be read to determine if the write cycle is still in progress. if bit 0 of the status register is set at 1, write cycle is in progress. if bit 0 is set at 0, the device is ready for the next instruction. page write the cat25320 features page write capability. after the first initial byte the host may continue to write up to 64 bytes of data to the cat25320. after each byte of data is received, six lower order address bits are internally incremented by one; the high order bits of address will remain constant. the only restriction is that the 64 bytes must reside on the same page. if the address counter reaches the end of the page and clock continues, the counter will roll over to the first address of the page and overwrite any data that may have been written. the cat25320 is automatically returned to the write disable state at the completion of the write cycle. figure 8 illustrates the page write sequence. status register write to write to the status register, the wrsr instruction should be sent. only bit 2, bit 3 and bit 7 of the status register can be written using the wrsr instruction. figure 7 illustrates the sequence of writing to status register. design considerations the cat25320 powers up in a write disable state and in a low power standby mode. a wren instruction must be issued to perform any writes to the device after power up. after power up cs must be brought low to enter a ready state and receive an instruction. after a successful byte/ page write or status register write the cat25320 goes into 012345678 10 911121314 sck si msb high impedance data in 15 so cs 7 6 5 4 3 2 10 00 0 000 0 1 opcode note: dashed line = mode (1, 1)
cat25320 9 doc no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice figure 9. hold hold hold hold hold timing figure 8. page write instruction timing sck si so 0 0 0 0 0 0 1 0 address data byte 1 012345678 212223 24-31 32-39 data byte 2 data byte 3 data byte n cs opcode 7..1 0 24+(n-1)x8-1..24+(n-1)x8 24+nx8-1 data in high impedance note: dashed line = mode (1, 1) cs sck hold so t cd t hd t hd t cd t lz t hz high impedance note: dashed line = mode (1, 1) a write disable mode. cs must be set high after the proper number of clock cycles to start an internal write cycle. access to the array during an internal write cycle is ignored and programming is continued. on power up, so is in a high impedance. if an invalid code is received, no data will be shifted into the cat25320 and the serial output pin (so) will remain in a high impedance state until the falling edge of cs is detected again. t csh cs sck wp wp t wps t wph figure 10. wp wp wp wp wp timing
cat25320 10 doc. no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice 8-lead 300 mil wide plastic dip (l) a e b e1 b2 l a2 a1 e d eb symbol a a1 b b2 d d2 e e1 e eb l min 0.120 0.015 0.014 0.355 0.300 0.300 0.310 0.240 0.115 0.130 0.150 nom 0.018 0.060 0.070 0.045 0.365 0.250 0.430 max 0.210 a2 0.115 0.130 0.195 0.022 0.400 0.325 0.325 0.280 0.100 bsc notes: 1. complies with jedec standard ms001. 2. all dimensions are in inches. 3. dimensioning and tolerancing per ansi y14.5m-1982
cat25320 11 doc no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice notes: 1. complies with jedec specification ms-012 dimensions. 2. all linear dimensions in millimeters. 8-lead 150 mil wide soic (v) symbol a1 a2 b c d e e1 e f min 0.0040 0.0532 0.013 0.1890 02284 0.149 0.0099 nom 0.0098 0.0075 0.050 bsc max 0.0098 0.0688 0.020 0.1968 0.2440 0.1574 0.0196 10 8 e e1 d a1 e l 1 c b a
cat25320 12 doc. no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice notes: 1. all dimensions in millimeters. 8-lead tssop (y) 8 5 1 4 e e1 e/2 pin #1 ident. d b l 1 e a a1 a2 see detail a see detail a seating plane c gage plane 0.25 symbol a a1 a2 b c d e e1 e l 1 min 0.05 0.80 0.09 2.90 6.30 6.4 4.30 0.00 8.00 nom 0.90 0.30 0.19 3.00 4.40 0.60 0.75 0.50 max 1.20 0.15 1.05 0.20 3.10 6.50 4.50 0.65 bsc
cat25320 13 doc no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice t n e n o p m o ce p y t e g a k c a p) w ( e z i s e p a t) p ( h c t i p t r a p p o s s t , c i o s l 8y , vm m 2 1m m 8 e p a t e z i s a n i m bcn i m * dn i m ng x a m t x a ml e e r / y t q m m 2 1 0 3 3 ) 0 0 . 3 1 ( 0 0 0 3 5 . 1 ) 9 5 0 . 0 ( ) 4 0 5 . 0 ( 0 8 . 2 1 ) 0 0 2 5 . 0 ( 0 2 . 3 1 2 . 0 2 ) 5 9 7 . 0 ( 0 5 ) 9 6 9 . 1 ( ) 8 8 4 . 0 ( 4 . 2 1 ) 8 5 5 . 0 ( 4 . 4 1 _ 4 . 8 1 _ ) 4 2 7 . 0 ( tape and reel direction of feed device orientation reel dimensions (1) embossed carrier dimensions component/tape size cross-reference notes: (1) metric dimensions will govern; english measurements rounded, for reference only and in parentheses. device orientation soic sproket hole tssop tdfn pin 1 pin 1 pin 1 embossed carrier top cover tape thickness (t 1 ) 0.10mm (0.004) max thick embossmen t a d* b* drive spokes optional, if used asterisked dimensions apply. * full radius* tape slot in core for tape start. 2.5mm (0.098) min width 10mm (0.394) min depth g (measured at hub) c n t 40mm (1.575) min. access hole at slot location
cat25320 14 doc. no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice w e f b 0 a 0 p d p 0 p 2 d 1 for components 2.0mm x 1.2mm and larger 10 pitches cumulative tolerance on tape 0.2mm( 0.008) embossment (2) k 0 b 1 k t for machine reference only including draft and radii concentric about b 0 user direction of feed center lines of cavity (2) top cover tape embossed carrier dimensions (12 pape only) embossed tape?ariable dimensions (1) embossed tape?onstant dimensions (1) s e z i s e p a tdep 0 . x a m t. n i m 1 da 0 b 0 k 0 ) 2 ( m m 2 1 ) 9 5 0 . 0 ( 5 . 1 ) 3 6 0 . 0 ( 6 . 1 ) 5 6 0 . 0 ( 5 6 . 1 ) 3 7 0 . 0 ( 5 8 . 1 ) 3 5 1 . 0 ( 9 . 3 ) 1 6 1 . 0 ( 1 . 4 0 0 4 ) 6 1 0 . 0 ( 5 . 1 ) 9 5 0 . 0 ( s e z i s e p a tb 1 . x a mf . x a m kp 2 . n i m rwp m m 2 1 2 . 8 ) 3 2 3 0 . 0 ( ) 5 1 2 0 . 0 ( 5 4 . 5 ) 9 1 2 0 . 0 ( 5 5 . 5 5 . 4 ) 7 7 1 . 0 ( ) 7 7 0 . 0 ( 5 9 . 1 ) 1 8 0 . 0 ( 5 0 . 2 0 3 ) 1 8 1 . 1 ( ) 0 6 4 . 0 ( 7 . 1 1 ) 4 8 4 . 0 ( 3 . 2 1 ) 5 7 2 . 0 ( 9 . 7 ) 5 5 3 . 0 ( 1 . 8 note: (1) metric dimensions will govern; english measurements rounded, for reference only and in parentheses. (2) a 0 b 0 k 0 are determined by component size. the clearance between the component and the cavity must be within 0.05 (0.002) min. to 0.65 (0.026) max. for 12mm tape, 0.05 (0.002) min. to 0.90 (0.035) max. for 16mm tape, and 0.05 (0.002) min. to 1.00 (0.039) ma x. for 24mm tape and larger. the component cannot rotate more than 20 within the determined cavity, see component rotation.
cat25320 15 doc no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice prefix device # suffix 25320 v i operating voltage blank = 2.5v to 5.5v 1.8 = 1.8v to 5.5v -1.8 cat temperature range i = industrial (-40 c to +85 c) optional product number company id package l: pdip (lead free, halogen free) v: soic, jedec (lead free, halogen free) y: tssop (lead free, halogen free) gt3 C lead finish/tape & reel g: nipdau lead plating t: tape & reel 3: 3000/reel notes: (1) the device used in the above example is a cat25320vi-1.8gt3 (soic, industrial temperature, 1.8 volt to 5.5 volt operating vo ltage, tape & reel)
cat25320 16 doc. no. 1111, rev. b ? 2006 by catalyst semiconductor, inc. characteristics subject to change without notice 8-lead pdip package marking 8-lead soic csi = catalyst semiconductor, inc. vv = voltage range 1.8v - 5.5v = 18 2.5v - 5.5v = blank 25320l = device code i = temperature range yy = production year ww = production week b = product revision yywwb 25320li vv csi = catalyst semiconductor, inc. vv = voltage range 1.8v - 5.5v = 18 2.5v - 5.5v = blank 25320v = device code i = temperature range yy = production year ww = production week b = product revision yywwb 25320vi vv 8-lead tssop ymbv 25320i y = production year m = production month b = die revision 25320 = device code i = industrial temperature range v = voltage range 1.8v - 5.5v = 8 2.5v - 5.5v = blank
catalyst semiconductor, inc. corporate headquarters 1250 borregas avenue sunnyvale, ca 94089 phone: 408.542.1000 fax: 408.542.1200 www.catsemi.com copyrights, trademarks and patents trademarks and registered trademarks of catalyst semiconductor include each of the following: dpp ae 2 minipot catalyst semiconductor has been issued u.s. and foreign patents and has patent applications pending that protect its products. catalyst semiconductor makes no warranty, representation or guarantee, express or implied, regarding the suitability of its products for any particular purpose, nor that the use of its products will not infringe its intellectual property rights or the rights of third parties with respect to any particular use or application and specifically disclaims any and all liability aris ing out of any such use or application, including but not limited to, consequential or incidental damages. catalyst semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgica l implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the catalyst semic onductor product could create a situation where personal injury or death may occur. catalyst semiconductor reserves the right to make changes to or discontinue any product or service described herein without not ice. products with data sheets labeled "advance information" or "preliminary" and other products described herein may not be in production or offered for sale . catalyst semiconductor advises customers to obtain the current version of the relevant product information before placing order s. circuit diagrams illustrate typical semiconductor applications and may not be complete. date rev. reason 12/20/05 a initial issue 03/21/06 b update d.c. operating characteristics update a.c. characteristics update pin description publication #: 1111 revison: b issue date: 03/21/06 revision history

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